A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires
نویسندگان
چکیده
منابع مشابه
A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires
In this paper, a silicon-oxide-nitride-silicon nonvolatile memory constructed on an n+-poly-Si nanowire [NW] structure featuring a junctionless [JL] configuration is presented. The JL structure is fulfilled by employing only one in situ heavily phosphorous-doped poly-Si layer to simultaneously serve as source/drain regions and NW channels, thus greatly simplifying the manufacturing process and ...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2012
ISSN: 1556-276X
DOI: 10.1186/1556-276x-7-162